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Used to build mechanical structures where the functionality of the devices are defined within the depth of the wafer (membranes, valves, cantilevers) |
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Encompasses all techniques allowing material to be removed from the bulk of a substrate (e.g. silicon, quartz, silicon on insulator, glass), such as anisotropic wet etching and deep reaction etching |
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True 3-dimensional design potential gives benefits especially for precision applications |
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Distinct processing tools and skills required | |
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Used to build mechanical features (cantilevers, free moving structures) on the surface of a substrate wafer (e.g. silicon, quartz, glass, polymer etc) |
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Successive deposition of sacrificial layers, removal of such layers by etching to release produced structures |
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Processes not largely dissimilar to classical semiconductor processes |
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Commonly integrated with IC process to produce monolothic MEMS |
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Limitations in product performance & stability |
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Used for vacuum level hermetic wafer-scale packaging |
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Two or more wafers of the same or different materials are bonded together
Three level silicon sandwich
Two level: silicon cap on thick SOI |
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Use of heat and pressure (fusion) or electrical field (anodic) |
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Not compatible with CMOS low temperature processing |
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